SSU50N10 54a , 100v , r ds(on) 22m n-ch enhancement mode power mosfet elektronische bauelemente 9-dec-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 2 63 50n10 rohs compliant product a suffix of -c specifies halogen free description the SSU50N10 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications . features advanced high cell density trench technology super low gate charge excellent cdv/dt effect decline 100% eas and 100% rg guaranteed green device available marking package information package mpq leader size to-263 0.8k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current 1 v gs =10v, t c =25c i d 54 a v gs =10v, t c =100c 38 a pulsed drain current 2 i dm 160 a total power dissipation 4 t c =25c p d 104 w t a =25c 3.13 single pulse avalanche energy 3 e as 98 mj single pulse avalanche current i as 41 a operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction-ambient (pcb mount) 1 r ja 40 c / w maximum thermal resistance junction-case 1 r jc 1.2 c / w 1 gate 3 source 2 drain date code ref. millimeter ref. millimeter min. max. min. max. a 4.40 4.80 c 2 1.17 1.45 b 0.76 1.00 b 2 1.1 1.47 l4 0.00 0.30 d 8 .5 9.0 c 0.36 0.5 e 2.54 ref l3 1.50 ref l 14.6 15.8 l1 2.29 2.79 0 8 e 9.80 10.4 l2 1.27 ref
SSU50N10 54a , 100v , r ds(on) 22m n-ch enhancement mode power mosfet elektronische bauelemente 9-dec-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 100 - - v v gs =0, i d =250 a gate-threshold voltage v gs(th) 2.5 - 4.5 v v ds =v gs , i d =250 a forward transconductance g fs - 27 - s v ds =5v, i d =30a gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current t j =25c i dss - - 1 a v ds =80v, v gs =0 t j =55c - - 5 static drain-source on-resistance 2 r ds(on) - 18 22 m v gs =10v, i d =30a - 36 40 v gs =7v, i d =15a gate resistance r g - 1.9 3.8 v ds =0, v gs =0, f =1.0mhz total gate charge q g - 27.6 38.6 nc i d =30a v ds =80v v gs =10v gate-source charge q gs - 11.4 16 gate-drain (miller) change q gd - 7.9 11.1 turn-on delay time t d(on) - 15.6 31.2 ns v ds =50 v i d =30a v gs =10v r g =3.3 rise time t r - 17.2 31 turn-off delay time t d(off) - 16.8 33.6 fall time t f - 9.2 18.4 input capacitance c iss - 1890 2645 pf v gs =0 v ds =15 v f =1.0mhz output capacitance c oss - 268 375 reverse transfer capacitance c rss - 67 94 guaranteed avalanche characteristics single pulse avalanche energy 5 eas 53 - - mj v dd =25v,l=0.1mh , i as =30a source-drain diode diode forward voltage 2 v sd - - 1.2 v i s =1a, v gs =0 continuous source current 1,6 i s - - 40 a v d =v g =0, force current reverse recovery time t rr - 34 - ns i f =30a, t j = 25c di/dt=100a/ s reverse recovery charge q rr - 47 - nc notes: 1. the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2. the data tested by pulsed , pulse width Q 300 s , duty cycle Q 2% 3. the eas data shows max. rating . the test condi tion is v dd =25v,v gs =10v,l=0.1mh,i as =41a 4. the power dissipation is limited by 150c junct ion temperature 5. the min. value is 100% eas tested guarantee. 6. the data is theoretically the same as i d and i dm , in real applications , should be limited by tota l power dissipation.
SSU50N10 54a , 100v , r ds(on) 22m n-ch enhancement mode power mosfet elektronische bauelemente 9-dec-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
SSU50N10 54a , 100v , r ds(on) 22m n-ch enhancement mode power mosfet elektronische bauelemente 9-dec-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
|
